1. Single-Ion Implantation for the Development of Si-Based MOSFET Devices with Quantum Functionalities. (28th November 2011) Authors: McCallum, Jeffrey C.; Jamieson, David N.; Yang, Changyi; Alves, Andrew D.; Johnson, Brett C.; Hopf, Toby; Thompson, Samuel C.; van Donkelaar, Jessica A. Other Names: Elliman Robert G. Academic Editor. Journal: Advances in materials science and engineering Issue: Volume 2012(2012) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗