1. Comment on 'Germanium electron–hole bilayer tunnel field-effect transistors with a symmetrically arranged double gate'. (26th October 2015) Authors: Padilla, J L; Alper, C; Gámiz, F; Ionescu, A M Journal: Semiconductor science and technology Issue: Volume 30:Number 12(2015:Dec.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗