1. A comparative investigation of 980 nm GaAs and 1550 nm InP-based diode lasers. (27th October 2021) Authors: Arslan, Kamer Ozge; Aksakal, Rukiye; Cakmak, Bulent Journal: Laser physics Issue: Volume 31:Number 11(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Erratum: Numerical investigation of 1550 nm passively mode-locked diode lasers with different gain and absorber configurations (2020 Laser Phys.30 116204). (9th December 2020) Authors: Aksakal, Rukiye; Duman, Caglar; Cakmak, Bulent Journal: Laser physics Issue: Volume 31:Number 1(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Numerical investigation of 1550 nm passively mode-locked diode lasers with different gain and absorber configurations. (30th October 2020) Authors: Aksakal, Rukiye; Duman, Caglar; Cakmak, Bulent Journal: Laser physics Issue: Volume 30:Number 11(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗