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Author/Creator Akiyama, A.

1. Fermi‐level pinning by carrier com‐ pensating midgap donor defect band in homoepitaxially grown p‐type ZnO by MBE. Issue 7 (31st March 2014)

Authors:
Masamoto, T.; Noda, K.; Maejima, T.; Natsume, R.; Matsuo, T.; Akiyama, A.; Yukue, T.; Hiroe, S.; Abe, T.; Kasada, H.; Harada, Y.; Ando, K.
Journal:
Physica status solidi
Issue:
Volume 11:Issue 7/8(2014:Jul.)
Page Start:
1353
Record Type:
Journal Article
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