1. Ion implantation of the 4H SiC epitaxial layers and substrates with 2 MeV Se+ and 1 MeV Al+ ions. (15th July 2015) Authors: Wierzchowski, W.; Turos, A.; Wieteska, K.; Stonert, A.; Ratajczak, R.; Jóźwik, P.; Wilhelm, R.; Akhamadaliev, S.; Mazur, K.; Paulmann, C.; Paszkowicz, Wojciech; Kaszkur, Zbigniew; Kozak, Maciej Journal: X-ray spectrometry Issue: Volume 44:Number 5(2015) Page Start: 371 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗