1. Effect of doping on the far-infrared intersubband transitions in nonpolar m-plane GaN/AlGaN heterostructures. (23rd February 2016) Authors: Lim, C B; Ajay, A; Bougerol, C; Lähnemann, J; Donatini, F; Schörmann, J; Bellet-Amalric, E; Browne, D A; Jiménez-Rodríguez, M; Monroy, E Journal: Nanotechnology Issue: Volume 27:Number 14(2016) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Effect of doping on the intersubband absorption in Si- and Ge-doped GaN/AlN heterostructures. (11th September 2017) Authors: Ajay, A; Lim, C B; Browne, D A; Polaczyński, J; Bellet-Amalric, E; Bleuse, J; den Hertog, M I; Monroy, E Journal: Nanotechnology Issue: Volume 28:Number 40(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Electrical and optical properties of heavily Ge-doped AlGaN. (28th January 2019) Authors: Blasco, R; Ajay, A; Robin, E; Bougerol, C; Lorentz, K; Alves, L C; Mouton, I; Amichi, L; Grenier, A; Monroy, E Journal: Journal of physics Issue: Volume 52:Number 12(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Ge doping of GaN beyond the Mott transition. (5th October 2016) Authors: Ajay, A; Schörmann, J; Jiménez-Rodriguez, M; Lim, C B; Walther, F; Rohnke, M; Mouton, I; Amichi, L; Bougerol, C; Den Hertog, M I; Eickhoff, M; Monroy, E Journal: Journal of physics Issue: Volume 49:Number 44(2016) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Intersubband absorption in GaN nanowire heterostructures at mid-infrared wavelengths. (11th July 2018) Authors: Ajay, A; Blasco, R; Polaczyński, J; Spies, M; Den Hertog, M I; Monroy, E Journal: Nanotechnology Issue: Volume 29:Number 38(2018) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Nonpolar m-plane GaN/AlGaN heterostructures with intersubband transitions in the 5–10 THz band. (5th October 2015) Authors: Lim, C B; Ajay, A; Bougerol, C; Haas, B; Schörmann, J; Beeler, M; Lähnemann, J; Eickhoff, M; Monroy, E Journal: Nanotechnology Issue: Volume 26:Number 43(2015) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗