1. Effects of nitridation on SiC/SiO2 structures studied by hard X-ray photoelectron spectroscopy. (27th May 2020) Authors: Berens, Judith; Bichelmaier, Sebastian; Fernando, Nathalie K; Thakur, Pardeep K; Lee, Tien-Lin; Mascheck, Manfred; Wiell, Tomas; Eriksson, Susanna K; Matthias Kahk, J; Lischner, Johannes; Mistry, Manesh V; Aichinger, Thomas; Pobegen, Gregor; Regoutz, Anna Journal: JPhys energy Issue: Volume 2:Number 3(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Electrically detected magnetic resonance study on defects in Si pn‐junctions created by proton implantation. Issue 11 (8th August 2014) Authors: Gruber, Gernot; Kirnstoetter, Stefan; Hadley, Peter; Koch, Markus; Aichinger, Thomas; Schulze, Holger; Schustereder, Werner; Pizzini, Sergio; Kissinger, Gudrun Journal: Physica status solidi Issue: Volume 11:Issue 11/12(2014) Page Start: 1593 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Impact of the NO Anneal on the Microscopic Structure and Chemical Composition of the Si‐Face 4H‐SiC/SiO2 Interface. Issue 12 (3rd April 2018) Authors: Gruber, Gernot; Gspan, Christian; Fisslthaler, Evelin; Dienstleder, Martina; Pobegen, Gregor; Aichinger, Thomas; Meszaros, Robert; Grogger, Werner; Hadley, Peter Journal: Advanced materials interfaces Issue: Volume 5:Issue 12(2018) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Interface chemistry and electrical characteristics of 4H-SiC/SiO2 after nitridation in varying atmospheres. Issue 44 (15th October 2018) Authors: Regoutz, Anna; Pobegen, Gregor; Aichinger, Thomas Journal: Journal of materials chemistry Issue: Volume 6:Issue 44(2018) Page Start: 12079 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs. (January 2018) Authors: Aichinger, Thomas; Rescher, Gerald; Pobegen, Gregor Journal: Microelectronics and reliability Issue: Volume 80(2018) Page Start: 68 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗