1. AlGaN/GaN HEMT-based high-sensitive NO2 gas sensors. (28th May 2019) Authors: Ranjan, Akhil; Agrawal, Manvi; Radhakrishnan, K.; Dharmarasu, Nethaji Journal: Japanese journal of applied physics Issue: Volume 58:Number SC(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Effect of III/V ratio on the polarity of AlN and GaN layers grown in the metal rich growth regime on Si(111) by plasma assisted molecular beam epitaxy. (19th May 2015) Authors: Agrawal, Manvi; Radhakrishnan, K.; Dharmarasu, Nethaji; Pramana, Stevin Snellius Journal: Japanese journal of applied physics Issue: Volume 54:Number 6(2015:Jun.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Enhancement of 2D Electron Gas Mobility in an AlN/GaN/AlN Double‐Heterojunction High‐Electron‐Mobility Transistor by Epilayer Stress Engineering. Issue 7 (23rd December 2019) Authors: Patwal, Shashank; Agrawal, Manvi; Radhakrishnan, K.; Seah, Tian Long Alex; Dharmarasu, Nethaji Other Names: Shahedipour-Sandvik F. Shadi guestEditor.; Qhalid Fareed guestEditor. Journal: Physica status solidi Issue: Volume 217:Issue 7(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗