1. Influence of Carbon Layer on the Properties of Ni-Based Ohmic Contact to n-Type 4H-SiC. (28th February 2013) Authors: Kuchuk, A.; Kladko, V.; Adamus, Z.; Wzorek, M.; Borysiewicz, M.; Borowicz, P.; Barcz, A.; Golaszewska, K.; Piotrowska, A. Other Names: Chiou C. W. Academic Editor.; Mao L.-F. Academic Editor. Journal: ISRN electronics Issue: Volume 2013(2013) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗