1. MoS2/MoTe2 Heterostructure Tunnel FETs Using Gated Schottky Contacts. (4th November 2019) Authors: Balaji, Yashwanth; Smets, Quentin; Śzabo, Áron; Mascaro, Marco; Lin, Dennis; Asselberghs, Inge; Radu, Iuliana; Luisier, Mathieu; Groeseneken, Guido Journal: Advanced functional materials Issue: Volume 30:Number 4(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗